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Single Crystal Wafers and PLZT Devices
We have established a process for forming high-quality single-crystal PLZT thin films on sapphire substrates using our unique "Solid Phase Epitaxy" method. PLZT is an oxide material consisting of lead (Pb), lanthanum (La), zirconium (Zr), and titanium (Ti), characterized by its extremely high electro-optic effect.
For inquiries regarding single-crystal PLZT wafers, please click here.
Overview of Single Crystal PLZT Wafers
| Substrate Material | Sapphire |
|---|---|
| Substrate Size | 2-inch, 4-inch (approx. 500 μm thickness) |
| PLZT Composition *1 | 9/65/35 |
| PLZT Film Thickness | 100–2,000 nm |
| PLZT Refractive Index *2 |
2.438 (Wavelength: 1550 nm) 2.446 (Wavelength: 1310 nm) |
| PLZT Electro-optic Effect | > 100–150 pm/V |
PLZT Devices
Detailed information can be found on the Epiphotonics Co., Ltd. website.
PLZT Ultra-High-Speed Optical Switch
By using a PLZT thin film as an optical waveguide, we have achieved 10-nanosecond ultra-high-speed switching and low power consumption. Various applications are expected.